2N7000,126 NXP Semiconductors, 2N7000,126 Datasheet - Page 9

• Manufacturer Part Number: 2N7000,126
• Description: MOSFET N-CH 60V 300MA TO-92
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of 2N7000,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 2N7000 AMO; 2N7000 AMO; 934003460126

9. Package outline
Fig 14. SOT54 (TO-92 variant).
Philips Semiconductors
9397 750 07153
Product specification
Plastic single-ended leaded (through hole) package; 3 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
OUTLINE
VERSION
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.56
b 1
IEC
b
1
0.45
0.40
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
Rev. 03 — 19 May 2000
E
2.54
A
e
SC-43
scale
EIAJ
2.5
N-channel enhancement mode field-effect transistor
1.27
e 1
14.5
12.7
5 mm
L
L 1
L 1
2.5
(1)
L
PROJECTION
EUROPEAN
© Philips Electronics N.V. 2000. All rights reserved.
ISSUE DATE
2N7000
b
97-02-28
c
e 1
e
SOT54
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