2N7000,126 NXP Semiconductors, 2N7000,126 Datasheet - Page 4

• Manufacturer Part Number: 2N7000,126
• Description: MOSFET N-CH 60V 300MA TO-92
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of 2N7000,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 2N7000 AMO; 2N7000 AMO; 934003460126

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07153
Product specification
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse
Vertical in still air.
duration.
Z th(j-a)
(K/W)
1000
100
0.1
10
0.00001
1
0.2
0.1
0.02
= 0.5
Rev. 03 — 19 May 2000
single pulse
0.0001
Conditions
vertical in still air;
lead length
0.05
N-channel enhancement mode field-effect transistor
0.001
0.01
5 mm;
t p (s)
Figure 4
0.1
1
© Philips Electronics N.V. 2000. All rights reserved.
P
t p
Value
150
10
T
2N7000
=
t p
T
03aa00
t
100
Unit
K/W
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