2N7000,126 NXP Semiconductors, 2N7000,126 Datasheet - Page 3

• Manufacturer Part Number: 2N7000,126
• Description: MOSFET N-CH 60V 300MA TO-92
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of 2N7000,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 2N7000 AMO; 2N7000 AMO; 934003460126

Philips Semiconductors
9397 750 07153
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
amb
der
function of ambient temperature.
P
= 25 C; I
=
der
----------------------
P
120
100
(%)
80
60
40
20
tot 25 C
0
P
tot
0
DM
25
is single pulse.
100%
I
0.01
50
D
0.1
10
(A)
1
1
75
T
P
amb
T amb = 25
100
( o C)
t p
T
o
125
C
R DSon = V DS / I D
=
t p
T
t
150
03aa11
175
Rev. 03 — 19 May 2000
V
D.C.
N-channel enhancement mode field-effect transistor
DS
10
Fig 2. Normalized continuous drain current as a
(V)
V
I
der
GS
function of ambient temperature.
I der (%)
=
4.5 V
------------------ -
I
120
100
D 25 C
80
60
40
20
0
I
D
0
25
100%
50
t p = 10 s
100 s
10 ms
100 ms
1 ms
75
T amb ( o C)
03aa02
© Philips Electronics N.V. 2000. All rights reserved.
100
100
125
150
2N7000
03aa19
175
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