2N7000,126 NXP Semiconductors, 2N7000,126 Datasheet - Page 6

• Manufacturer Part Number: 2N7000,126
• Description: MOSFET N-CH 60V 300MA TO-92
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of 2N7000,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 2N7000 AMO; 2N7000 AMO; 934003460126

Philips Semiconductors
9397 750 07153
Product specification
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
j
= 25 C
= 25 C
R
function of drain-source voltage; typical values.
of drain current; typical values.
DSon
I D (A)
0.8
0.6
0.4
0.2
1
0
10
( )
9
8
7
6
5
4
3
2
1
0
0
0
T j = 25
0.1
3 V
0.4
o
C
0.2
3.5V
0.8
0.3
V DS (V)
4 V
I D (A)
0.4
1.2
0.5
4.5 V
V GS = 10 V
V
0.6
1.6
GS
T j = 25
3.5 V
= 10 V
03aa04
4.5 V
3 V
0.7
4 V
03aa05
o
C
2
0.8
Rev. 03 — 19 May 2000
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain source on-state resistance
T
a
j
a
=
= 25 C and 150 C; V
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
function of gate-source voltage; typical values.
factor as a function of junction temperature.
2
1
0
--------------------------- -
R
-60
DSon 25 C
I D (A)
R
DSon
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
-20
V DS > I D X R DSon
1
20
2
DS
T
j
V
( o C)
T j = 25
3
60
GS
I
D
© Philips Electronics N.V. 2000. All rights reserved.
(V)
o
R
4
C
DSon
100
5
150
o
140
2N7000
C
6
03aa06
03aa28
7
180
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