SI4800,518 NXP Semiconductors, SI4800,518 Datasheet - Page 2

• Manufacturer Part Number: SI4800,518
• Description: MOSFET N-CH 30V 9A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4800,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056750518; SI4800 /T3; SI4800 /T3

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 12899
Product data
Type number
SI4800
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
D
DM
S
stg
j
DS
GS
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current
Ordering information
Limiting values
Package
Name
SO8
Description
plastic small outline package; 8 leads
Conditions
25 C
T
T
T
T
T
T
Rev. 02 — 17 February 2004
amb
amb
amb
amb
amb
amb
= 25 C; pulsed; t
= 70 C; pulsed; t
= 25 C; pulsed; t
= 25 C; pulsed; t
= 70 C; pulsed; t
= 25 C; pulsed; t
T
j
150 C
p
p
p
p
p
p
10 s;
10 s;
10 s;
10 s;
10 s;
10 s
N-channel TrenchMOS™ logic level FET
Figure 2
Figure 2
Figure 1
Figure 1
Figure 3
and
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3
Min
-
-
-
-
-
-
-
-
55
55
SI4800
Max
30
9
7
40
2.5
1.6
+150
+150
2.3
20
Version
SOT96-1
2 of 12
Unit
V
V
A
A
A
W
W
A
C
C