BSP254A,126 NXP Semiconductors, BSP254A,126 Datasheet - Page 5

• Manufacturer Part Number: BSP254A,126
• Description: MOSFET P-CH 250V 200MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSP254A,126

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 90pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 933981790126; BSP254A AMO; BSP254A AMO

Philips Semiconductors
April 1995
handbook, halfpage
handbook, halfpage
P-channel enhancement mode vertical
D-MOS transistor
Fig.7
Fig.5 Typical output characteristics; T
(mA)
(A)
I D
I D
10
10
0.8
0.6
0.4
0.2
10
1
0
3
2
0
8
Typical on-resistance as a function of drain
current, T
12
5
V GS = 10 V
j
= 25 C.
16
10
V GS = 10 V
5 V
4 V
20
15
6 V
5 V
4 V
3 V
24
20
R DSon ( )
V DS (V)
j
MDA706
MDA708
= 25 C.
28
25
5
handbook, halfpage
handbook, halfpage
Fig.8
Fig.6
(pF)
(A)
160
120
I D
C
0.8
0.6
0.4
0.2
80
40
0
1
0
0
0
Typical capacitances as a function of
drain-source voltage; V
T
j
Typical transfer characteristic; V
T
= 25 C.
j
= 25 C.
5
2
10
4
BSP254; BSP254A
15
6
GS
Product specification
= 0; f = 1 MHz;
20
8
V DS (V)
V GS (V)
C iss
C rss
C oss
MDA734
MDA707
DS
= 10 V;
25
10