BSP254A,126 NXP Semiconductors, BSP254A,126 Datasheet - Page 2

• Manufacturer Part Number: BSP254A,126
• Description: MOSFET P-CH 250V 200MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSP254A,126

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 90pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 933981790126; BSP254A AMO; BSP254A AMO

Philips Semiconductors
FEATURES
DESCRIPTION
P-channel vertical D-MOS transistor
in a TO-92 variant envelope and
intended for use as a line current
interruptor in relay, high-speed and
line transformer drivers.
PINNING - TO-92 variant BSP254
PINNING - TO-92 variant BSP254A
April 1995
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
P-channel enhancement mode vertical
D-MOS transistor
PIN
PIN
1
2
3
1
2
3
gate
drain
source
source
gate
drain
DESCRIPTION
DESCRIPTION
QUICK REFERENCE DATA
V
V
I
R
P
SYMBOL
D
DS
GSO
Y
tot
DS(on)
fs
handbook, halfpage
drain-source
voltage
gate-source
voltage
forward transfer
admittance
drain current (DC)
drain-source
on-state resistance
total power
dissipation
PARAMETER
2
Fig.1 Simplified outline and symbol.
1
2
3
open drain
I
V
V
I
T
CONDITIONS MIN. TYP. MAX. UNIT
D
D
amb
DS
GS
= 200 mA;
= 200 mA
= 25V
= 10 V;
= 25 C
MAM147
BSP254; BSP254A
g
100
Product specification
d
s
200
10
15
1
250
20
0.2
V
V
mS
A
W