BSP254A,126 NXP Semiconductors, BSP254A,126 Datasheet - Page 3

• Manufacturer Part Number: BSP254A,126
• Description: MOSFET P-CH 250V 200MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSP254A,126

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 90pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 933981790126; BSP254A AMO; BSP254A AMO

handbook, halfpage
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Transistor mounted on printed circuit board, maximum lead length 4 mm,
April 1995
P
T
T
R
V
V
I
I
SYMBOL
stg
j
tot
th j-a
P-channel enhancement mode vertical
D-MOS transistor
D
DM
DS
GSO
mounting pad for drain lead minimum 10 mm x 10 mm.
P tot
(W)
1.2
0.8
0.4
0
SYMBOL
0
Fig.2 Power derating curve.
drain-source voltage
gate-source voltage
drain current
drain current
total power dissipation
storage temperature range
junction temperature
50
PARAMETER
100
from junction to ambient (note 1)
150
T amb ( C)
MRC238
200
open drain
DC
peak value
T
PARAMETER
amb
3
= 25 C (note 1)
CONDITIONS
BSP254; BSP254A
65
MIN.
Product specification
250
20
0.2
0.6
1
150
125
150
MAX.
MAX.
V
V
A
A
W
C
C
K/W
UNIT
UNIT