BSP254A,126 NXP Semiconductors, BSP254A,126 Datasheet - Page 4

• Manufacturer Part Number: BSP254A,126
• Description: MOSFET P-CH 250V 200MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSP254A,126

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 90pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 933981790126; BSP254A AMO; BSP254A AMO

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. Measured at f = 1 MHz; V
2.
April 1995
handbook, halfpage
R
C
C
C
t
t
j
on
off
V
I
I
V
Y
= 25 C unless otherwise specified.
DS(on)
iss
oss
rss
P-channel enhancement mode vertical
D-MOS transistor
DSS
GSS
SYMBOL
(BR)DSS
GS(th)
fs
V
GS
= 0 to 10 V; I
10 V
0 V
Fig.3 Switching times test circuit.
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
transfer admittance
input capacitance
output capacitance
feedback capacitance
turn-on time
turn-off time
50
D
= 250 mA; V
DS
PARAMETER
= 25 V; V
V DD = 50 V
I D
MBB689
DD
= 50 V.
GS
= 0.
4
handbook, halfpage
V
V
V
note 1
note 1
note 1
note 2
note 2
V
I
V
V
I
V
I
V
I
GS
DS
GS
D
D
D
D
INPUT
OUTPUT
GS
DS
GS
GS
DS
CONDITIONS
= 10 A
= 1 mA
= 200 mA;
= 200 mA
= 0
= 0
= V
= 200 V
= 25 V
= 0
= 20 V
= 10 V
DS
Fig.4 Input and output waveforms.
10 %
t on
90 %
250
0.8
100
BSP254; BSP254A
MIN.
90 %
10
200
65
20
6
5
20
TYP.
Product specification
t off
1
100
2.8
15
90
30
15
10
30
MAX.
MBB690
10 %
V
nA
V
mS
pF
pF
pF
ns
ns
UNIT
A