IRFR224BTM_TC002 Fairchild Semiconductor, IRFR224BTM_TC002 Datasheet - Page 132

no-image

IRFR224BTM_TC002

Manufacturer Part Number
IRFR224BTM_TC002
Description
MOSFET N-CH 250V 3.8A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRFR224BTM_TC002

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.fairchildsemi.com
Rectifiers – Ultrafast Recovery Rectifiers
DO-15
EGP20A
EGP20B
EGP20C
EGP20D
EGP20F
EGP20G
EGP20J
EGP20K
DO-201AD
EGP30A
EGP30B
EGP30C
EGP30D
EGP30F
EGP30G
EGP30J
EGP30K
DO-41
EGP10A
UF4001
EGP10B
UF4002
EGP10C
EGP10D
UF4003
EGP10F
UF4004
EGP10G
EGP10J
UF4005
EGP10K
UF4006
UF4007
Products
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
RRM
1000
100
150
200
300
400
600
800
100
150
200
300
400
600
800
100
100
150
200
200
300
400
400
600
600
800
800
50
50
50
50
(V)
I
F (AV)
2
2
2
2
2
2
2
2
3
3
3
3
3
3
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(A)
I
FSM
125
125
125
125
125
125
125
125
75
75
75
75
75
75
75
75
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
(A)
2-127
V
F
Max (V)
0.95
0.95
0.95
0.95
1.25
1.25
0.95
0.95
0.95
0.95
1.25
1.25
1.25
1.25
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1
1
1
1
1
1
1
1
Discrete Power Products –
t
rr
Max (ns)
50
50
50
50
50
50
75
75
50
50
50
50
50
50
75
75
50
50
50
50
50
50
50
50
50
50
75
75
75
75
75
I
RM
or I
(µA)
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
R
Max
Diodes and Rectifiers
t
a
Typ (ns)
@125°C
t
b
Typ (ns)
@125°C

Related parts for IRFR224BTM_TC002