FQB5N50CFTM Fairchild Semiconductor, FQB5N50CFTM Datasheet

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FQB5N50CFTM

Manufacturer Part Number
FQB5N50CFTM
Description
MOSFET N-CH 500V 5A D2PAK
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FQB5N50CFTM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.55 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
625pF @ 25V
Power - Max
96W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQB5N50CFTMTR
©2006 Fairchild Semiconductor Corporation
FQB5N50CF Rev. A
FQB5N50CF
500V N-Channel MOSFET
Features
• 5A, 500V, R
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 1.55 Ω @V
GS
G
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
= 25°C)
Parameter
Parameter
D
FQB Series
2
-PAK
D
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FQB5N50CF
-55 to +150
FQB5N50CF
± 30
0.76
500
300
300
3.2
9.6
4.5
20
96
S
5
5
62.5
1.3
40
D
FRFET
May 2006
www.fairchildsemi.com
Units
W/°C
Units
V/ns
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQB5N50CFTM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB5N50CF Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology ...

Page 2

... Package Marking and Ordering Information Device Marking Device FQB5N50CF FQB5N50CFTM FQB5N50CF FQB5N50CFTF Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV / DSS Breakdown Voltage Temperature Coefficient ∆ Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5 ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FQB5N50CF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FQB5N50CF Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions FQB5N50CF Rev. A D2-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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