FQB9N25CTM Fairchild Semiconductor, FQB9N25CTM Datasheet - Page 7
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FQB9N25CTM
Manufacturer Part Number
FQB9N25CTM
Description
MOSFET N-CH 250V 8.8A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB9N25CTM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 4.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
Package Dimensions
1.27
2.54 TYP
0.10
10.00
9.90
0.20
0.20
2.54 TYP
0.80
0.10
D
2
-PAK
10.00
(2XR0.45)
4.50
(8.00)
(4.40)
0.20
0.20
2.40
0.10
1.30
0.80
0.50
Dimensions in Millimeters
+0.10
–0.05
0.20
0.15
+0.10
–0.05
0.10
Rev. A, March 2004