FQB630TM Fairchild Semiconductor, FQB630TM Datasheet
FQB630TM
Manufacturer Part Number
FQB630TM
Description
MOSFET N-CH 200V 9A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQB630TM.pdf
(9 pages)
Specifications of FQB630TM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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QFET
QFET
QFET
QFET
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FQB630TM Summary of contents
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TYP 10.00 0.20 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 ...
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TYP 10.00 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 ...
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