IRF540N_R4942 Fairchild Semiconductor, IRF540N_R4942 Datasheet - Page 4

• Manufacturer Part Number: IRF540N_R4942
• Description: MOSFET N-CH 100V 33A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of IRF540N_R4942

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 79nC @ 20V
• Input Capacitance (ciss) @ Vds: 1220pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF540NFS; IRF540N_R4942

Typical Performance Curves
©2002 Fairchild Semiconductor Corporation
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
300
100
60
40
20
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
10
0
3.0
2.5
2.0
1.5
1.0
0.5
1
2
1
-80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
FIGURE 7. TRANSFER CHARACTERISTICS
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DD
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 15V
RESISTANCE vs JUNCTION TEMPERATURE
-40
V
V
DS
GS
T
J
3
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
DS(ON)
, GATE TO SOURCE VOLTAGE (V)
0
10
T
40
J
= 175
4
o
80
C
T
J
V
GS
= 25
(Continued)
T
T
SINGLE PULSE
T
120
J
C
J
= 10V, I
= MAX RATED
= -55
= 25
o
o
5
C
C)
100
o
o
C
C
D
100µs
10ms
160
1ms
= 33A
300
200
6
NOTE: Refer to Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
200
100
10
60
40
20
0.001
0
1.2
1.0
0.8
0.6
0
-80
FIGURE 8. SATURATION CHARACTERISTICS
STARTING T
CAPABILITY
JUNCTION TEMPERATURE
-40
If R = 0
t
If R ≠ 0
t
AV
AV
V
DS
V
V
T
= (L)(I
= (L/R)ln[(I
1
J
GS
GS
t
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
AV
= 150
0
= 20V
= 10V
, TIME IN AVALANCHE (ms)
0.01
AS
)/(1.3*RATED BV
o
C
AS
40
*R)/(1.3*RATED BV
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
80
= 25
STARTING T
V
GS
DSS
0.1
o
C
= V
120
- V
DS
o
3
DD
DSS
C)
V
V
, I
GS
GS
V
J
D
)
GS
= 25
= 250µA
160
- V
= 7V
= 6V
IRF540N Rev. C
=5V
DD
o
C
) +1]
200
1
4