BSS119 L6327 Infineon Technologies, BSS119 L6327 Datasheet - Page 7

• Manufacturer Part Number: BSS119 L6327
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS119 L6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2.3V @ 50µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000247290

13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSS119
0.2 V
0.5 V
0.8 V
I
D
G
0.4
DS max
DS max
DS max
= 0.17 A pulsed, T
); parameter: V
0.8
1.2
1.6
DS
j
= 25 °C
,
2
nC
Q
Rev. 1.3
G
2.6
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
120
114
112
110
108
106
104
102
100
V
98
96
94
92
90
-60
BSS119
= f ( T
-20
j
)
20
60
100
2006-12-01
BSS119
°C
T
j
180