BSS119 L6327 Infineon Technologies, BSS119 L6327 Datasheet - Page 2

• Manufacturer Part Number: BSS119 L6327
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS119 L6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2.3V @ 50µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000247290

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - ambient
D
GS
DS
DS
GS
GS
GS
=50µA
=100V, V
=100V, V
=0, I
=20V, V
=4.5V, I
=10V, I
D
=250µA
D
D
DS
=0.17A
GS
GS
=0.13 A
=0
=0, T
=0, T
j
j
=25°C
=150°C
at minimal footprint
GS
= V
j
DS
= 25 °C, unless otherwise specified
Rev. 1.3
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
min.
min.
100
1.3
-
-
-
-
-
-
Values
Values
0.05
typ.
typ.
1.8
0.5
4.9
3.4
10
-
-
max.
max.
100
350
2.3
0.1
10
2006-12-01
5
6
-
BSS119
Unit
V
µA
nA
Unit
K/W