BSS119 L6327 Infineon Technologies, BSS119 L6327 Datasheet - Page 5

• Manufacturer Part Number: BSS119 L6327
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS119 L6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2.3V @ 50µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000247290

5 Typ. output characteristic
I
parameter: T
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f ( V
0.34
0.28
0.24
0.16
0.12
0.08
0.04
0.34
0.28
0.24
0.16
0.12
0.08
0.04
0.2
0.2
A
A
0
0
0
0
10V
7V
6V
5V
4.8V
4.6V
4V
3.8V
3.4V
DS
GS
)
); V
0.5
0.8
j
j
= 25 °C, V
= 25 °C
DS
1
1.6
2 x I
1.5
D
GS
2.4
x R
DS(on)max
2
3.2
V
V
V
V
Rev. 1.3
DS
GS
4.4
3
Page 5
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. forward transconductance
g
parameter: T
fs
DS(on)
= f(I
0.24
0.22
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.3
S
0.2
0.1
12
10
9
8
7
6
5
4
3
2
1
0
0
0
0
D
= f (I
)
0.04 0.08 0.12 0.16 0.2
0.04 0.08 0.12 0.16 0.2
D
j
j
= 25 °C, V
= 25 °C
)
GS
0.24 0.28
0.24 0.28
2006-12-01
BSS119
3.4V
3.8V
4V
4.6V
4.8V
5V
6V
7V
10V
I
I
D
D
A
A
0.34
0.34