BSS119 L6327 Infineon Technologies, BSS119 L6327 Datasheet - Page 6

• Manufacturer Part Number: BSS119 L6327
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS119 L6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2.3V @ 50µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000247290

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f ( V
parameter: V
DS(on)
10
10
10
10
pF
24
20
18
16
14
12
10
8
6
4
2
0
-60
3
2
1
0
0
BSS119
DS
= f (T
)
-20
5
D
GS
j
)
= 0.17 A, V
=0, f=1 MHz, T
20
10
98%
typ
Crss
60
15
Coss
Ciss
GS
100
= 10 V
20
j
= 25 °C
°C
V
T
V
Rev. 1.3
j
DS
180
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
10
10
10
10
2.6
2.2
1.8
1.6
1.4
1.2
0.8
0.6
A
V
-1
-2
-3
2
1
-60
0
0
BSS119
= f (T j )
SD
)
0.4
-20
GS
0.8
= V
20
DS ;
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
2%
I
D
1.6
typ.
60
=50µA
98%
2
100
2006-12-01
2.4
BSS119
°C
V
V
T
SD
j
160
3