BSS119 L6327 Infineon Technologies, BSS119 L6327 Datasheet
BSS119 L6327
Specifications of BSS119 L6327
Related parts for BSS119 L6327
BSS119 L6327 Summary of contents
Page 1
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Type Package PG-SOT23 BSS119 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current T =25°C A Reverse diode dv/dt I =0.17A, ...
Page 2
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =250µ Gate threshold voltage =50µA D Zero gate voltage drain ...
Page 3
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
Page 4
Power dissipation tot A BSS119 0.38 W 0.32 0.28 0.24 0.2 0.16 0.12 0.08 0. Safe operating area ...
Page 5
Typ. output characteristic parameter ° 0.34 10V 0.28 4.8V 4.6V 0.24 4V 3.8V 3.4V 0.2 0.16 0.12 0.08 0. ...
Page 6
Drain-source on-state resistance DS(on) j parameter : BSS119 98 typ 2 0 -60 - Typ. ...
Page 7
Typ. gate charge parameter 0.17 A pulsed BSS119 0 max 8 0 max 0 max 6 4 ...
Page 8
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...