STW120NF10 STMicroelectronics, STW120NF10 Datasheet - Page 8

MOSFET N-CH 100V 110A TO-247

STW120NF10

Manufacturer Part Number
STW120NF10
Description
MOSFET N-CH 100V 110A TO-247
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STW120NF10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10.5 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
233nC @ 10V
Input Capacitance (ciss) @ Vds
5200pF @ 25V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
312 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Current, Drain
110 A
Gate Charge, Total
172 nC
Package Type
TO-247
Polarization
N-Channel
Resistance, Drain To Source On
0.009 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
132 ns
Time, Turn-on Delay
25 ns
Transconductance, Forward
90 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Continuous Drain Current Id
60A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
9mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5166-5

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Part Number:
STW120NF10
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Test circuit
3
8/15
Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
Figure 16. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 13. Gate charge test circuit
Figure 15. Unclamped inductive load test
Figure 17. Switching time waveform
STW120NF10 - STP120NF10 - STB120NF10
circuit

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