STW120NF10 STMicroelectronics, STW120NF10 Datasheet - Page 3

• Manufacturer Part Number: STW120NF10
• Description: MOSFET N-CH 100V 110A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW120NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 110 A
• Gate Charge, Total: 172 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.009 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 132 ns
• Time, Turn-on Delay: 25 ns
• Transconductance, Forward: 90 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 9mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5166-5

STW120NF10 - STP120NF10 - STB120NF10
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. I
3. Starting Tj = 25°C, I
Table 2.
Symbol
dv/dt
Symbol
R
R
I
E
SD
DM
P
V
thj-case
V
T
thj-amb
AS
T
T
I
I
TOT
GS
DS
stg
D
D
< 120A, di/dt < 300A/µs, V
L
J
(1)
(3)
(2)
Absolute maximum ratings
Thermal resistance
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Maximum lead temperature for soldering purpose
Thermal resistance junction-case max
Thermal resistance junction-ambient max
D
= 60A, V
DD
DD
= 80%V
= 50V
C
Parameter
= 25°C
Parameter
GS
(BR)DSS
= 0)
C
C
=100°C
= 25°C
-55 to 175
Value
Value
± 20
2.08
0.48
62.5
100
110
440
312
550
300
77
10
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
°C
W
V
V
A
A
A
3/15