STW120NF10 STMicroelectronics, STW120NF10 Datasheet - Page 5

• Manufacturer Part Number: STW120NF10
• Description: MOSFET N-CH 100V 110A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW120NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 110 A
• Gate Charge, Total: 172 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.009 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 132 ns
• Time, Turn-on Delay: 25 ns
• Transconductance, Forward: 90 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 9mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5166-5

STW120NF10 - STP120NF10 - STB120NF10
Table 5.
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
di/dt = 100A/µs,
V
(see Figure 17)
V
R
(see Figure 12)
SD
SD
DD
DD
G
=4.7Ω, V
=120A, V
=120A,
=40V, Tj=150°C
Test conditions
=50V, I
Test conditions
D
= 60A,
GS
GS
=10V
=0
Electrical characteristics
Min.
Min
Typ.
Typ.
152
760
132
10
25
90
68
Max.
Max
110
440
1.3
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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