STW120NF10 STMicroelectronics, STW120NF10 Datasheet - Page 4

• Manufacturer Part Number: STW120NF10
• Description: MOSFET N-CH 100V 110A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW120NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 110 A
• Gate Charge, Total: 172 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.009 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 132 ns
• Time, Turn-on Delay: 25 ns
• Transconductance, Forward: 90 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 9mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5166-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
V
CASE
(BR)DSS
g
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
oss
rss
iss
gs
gd
(1)
g
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
V
V
V
V
(see Figure 13)
I
V
V
V
V
V
D
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
= 250µA, V
= V
= 10V, I
=0
=80V, I
Test conditions
Test conditions
= Max rating,
= Max rating@125°C
= ±20V
=25V, I
=25V, f=1 MHz,
=10V
GS
STW120NF10 - STP120NF10 - STB120NF10
, I
D
D
D
D
= 60A
= 120A
= 60A
GS
= 250µA
= 0
Min.
Min.
100
2
5200
0.009
Typ.
785
325
172
Typ.
90
32
64
0.0105
Max.
Max.
±
233
100
10
1
4
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω
S