STB12NK80ZT4 STMicroelectronics, STB12NK80ZT4 Datasheet - Page 4

• Manufacturer Part Number: STB12NK80ZT4
• Description: MOSFET N-CH 800V 10.5A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB12NK80ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 2620pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.25A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 650mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4320-2

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
V
C
Symbol
Symbol
R
CASE
V
(BR)DSS
g
osseq
t
t
t
increases from 0 to 80% V
I
C
I
C
r(Voff)
DS(on)
C
Q
GS(th)
Q
d(on)
d(off)
GSS
DSS
fs
Q
oss eq.
t
oss
t
t
t
iss
rss
gs
gd
c
r
f
f
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Off voltage rise time
Fall time
Cross-over time
Drain-source breakdown
voltage
Peak diode recovery
voltage slope
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
GS
= 0)
Parameter
Parameter
DSS
V
V
V
V
(see
V
R
(see
V
R
(see
I
V
V
Tc=125°C
V
V
V
D
DS
DS
GS
DD
GS
DD
DD
DS
DS
GS
DS
GS
G
G
= 1mA, V
=4.7Ω, V
=4.7Ω, V
= V
= 10V, I
=0, V
=640V, I
=400 V, I
=640 V, I
=15V, I
=25V, f=1 MHz, V
=10V
=Max rating,
=Max rating,
= ± 20V
Figure
Figure
Figure
Test conditions
Test conditions
GS
STB12NK80Z - STP12NK80Z - STW12NK80Z
DS
, I
D
D
GS
D
18)
19)
19)
D
=0V to 640V
GS
GS
D
D
= 5.25A
= 5.25A
= 100µA
= 10.5A
= 5.25A,
= 10.5A,
= 0
=10V
=10V
GS
=0
Min.
Min.
800
3
2620
Typ.
Typ.
3.75
0.65
250
100
12
53
87
14
44
30
18
70
20
16
15
28
oss
Max.
Max.
0.75
±
4.5
when V
50
10
1
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
Ω
S