STB12NK80ZT4 STMicroelectronics, STB12NK80ZT4 Datasheet - Page 3

• Manufacturer Part Number: STB12NK80ZT4
• Description: MOSFET N-CH 800V 10.5A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB12NK80ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 2620pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.25A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 650mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4320-2

STB12NK80Z - STP12NK80Z - STW12NK80Z
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. I
Table 2.
Table 3.
Symbol
R
Symbol
R
Symbol
thj-case
dv/dt
SD
E
I
V
I
thj-a
P
T
AS
DM
AS
V
V
T
DGR
l
T
I
I
TOT
≤ 10.5 A, di/dt ≤ 200A/µs, V
DS
GS
stg
D
D
J
(1)
(2)
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
DD
≤ V
Parameter
(BR)DSS
Parameter
Parameter
C
GS
= 25°C
GS
= 20KΩ)
, T
= 0)
j
≤ T
C
C
JMAX
=100°C
= 25°C
TO-220/
D²PAK
62.5
-55 to 150
Value
Value
Value
0.66
± 30
10.5
1.51
10.5
300
400
800
800
190
6.6
4.5
42
Electrical ratings
TO-247
50
°C/W
°C/W
W/°C
Unit
Unit
Unit
mJ
°C
°C
W
A
V
V
V
A
A
A
V
3/16