STB12NK80ZT4 STMicroelectronics, STB12NK80ZT4 Datasheet - Page 13

• Manufacturer Part Number: STB12NK80ZT4
• Description: MOSFET N-CH 800V 10.5A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB12NK80ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 2620pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.25A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 650mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4320-2

STB12NK80Z - STP12NK80Z - STW12NK80Z
DIM.
C2
D1
A1
A2
B2
E1
V2
L2
L3
M
C
D
G
R
A
B
E
L
2.49
0.03
1.14
0.45
1.23
8.95
4.88
1.27
MIN.
4.4
0.7
1.4
2.4
10
15
0º
D
TO-247 MECHANICAL DATA
2
mm.
TYP
8.5
0.4
PAK MECHANICAL DATA
8
15.85
MAX.
2.69
0.23
0.93
1.36
9.35
10.4
5.28
1.75
4.6
1.7
0.6
1.4
3.2
4º
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
MIN.
Package mechanical data
0.315
0.334
0.015
TYP.
inch
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
MAX.
1
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