STB12NK80ZT4 STMicroelectronics, STB12NK80ZT4 Datasheet

MOSFET N-CH 800V 10.5A D2PAK

STB12NK80ZT4

Manufacturer Part Number
STB12NK80ZT4
Description
MOSFET N-CH 800V 10.5A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STB12NK80ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5.25A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
10.5A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
87nC @ 10V
Input Capacitance (ciss) @ Vds
2620pF @ 25V
Power - Max
190W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.75 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10.5 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
5.25A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
650mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4320-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB12NK80ZT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB12NK80ZT4
Manufacturer:
ST
0
Order codes
Features
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Application
April 2007
STW12NK80Z
STB12NK80Z
STP12NK80Z
Extremely high dv/dt capability
Improved esd capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing reliability
Switching application
Type
STW12NK80Z
STB12NK80Z
STP12NK80Z
Part number
N-channel 800V - 0.65Ω - 10.5A - TO-220 - D
(@Tjmax)
V
800V
800V
800V
DSS
Zener - Protected SuperMESH™ Power MOSFET
R
<0.75Ω 10.5 A 190W
<0.75Ω 10.5 A 190W
<0.75Ω 10.5 A 190W
DS(on)
W12NK80Z
B12NK80Z
P12NK80Z
I
Marking
D
STP12NK80Z - STW12NK80Z
P
W
Rev 6
Internal schematic diagram
TO-220
Package
TO-220
TO-247
D
2
PAK
1
2
3
STB12NK80Z
D
2
PAK
2
1
PAK - TO-247
3
Tape & reel
Packaging
TO-247
Tube
Tube
www.st.com
1/16
16

Related parts for STB12NK80ZT4

STB12NK80ZT4 Summary of contents

Page 1

N-channel 800V - 0.65Ω - 10.5A - TO-220 - D Zener - Protected SuperMESH™ Power MOSFET Features V DSS Type R DS(on) (@Tjmax) STB12NK80Z 800V <0.75Ω 10.5 A 190W STP12NK80Z 800V <0.75Ω 10.5 A 190W STW12NK80Z 800V <0.75Ω 10.5 A ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB12NK80Z - STP12NK80Z - STW12NK80Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous) at ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Peak diode recovery I DSS voltage slope Gate body leakage current I GSS ( Gate ...

Page 5

STB12NK80Z - STP12NK80Z - STW12NK80Z Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/ D²PAK Figure 3. Safe operating area for TO-247 Figure 5. Output characteristics 6/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 2. Thermal impedance for TO-220/ D²PAK Figure 4. ...

Page 7

STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance ...

Page 8

Electrical characteristics Figure 13. Source-drain diode forward characteristics Figure 15. Maximum avalanche energy vs temperature 8/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 14. Normalized B VDSS vs temperature ...

Page 9

STB12NK80Z - STP12NK80Z - STW12NK80Z 3 Test circuit Package mechanical data Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive waveform Test circuit Package ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 11

STB12NK80Z - STP12NK80Z - STW12NK80Z Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.49 0.70 15.25 ...

Page 12

Package mechanical data DIM øP øR S 12/16 STB12NK80Z - STP12NK80Z - STW12NK80Z TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.85 5.15 2.20 2.60 1.0 1.40 2.0 2.40 ...

Page 13

STB12NK80Z - STP12NK80Z - STW12NK80Z DIM PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 ...

Page 14

Packing mechanical data 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 ...

Page 15

STB12NK80Z - STP12NK80Z - STW12NK80Z 6 Revision history Table 8. Revision history Date 22-Jun-2004 28-Jan-2005 08-Sep-2005 31-Jul-2006 27-Apr-2007 Revision 2 Preliminary version 3 Complete version 4 Figure 1 and Figure 3 5 The document has been reformatted 6 Modified Rds(on) ...

Page 16

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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