STD10NM60N STMicroelectronics, STD10NM60N Datasheet - Page 9

• Manufacturer Part Number: STD10NM60N
• Description: MOSFET N-CH 600V 8A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD10NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.53ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 550 mOhms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10021-2

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
3
Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
25 Ω
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V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
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R
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DM
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2200
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(BR)DSS
3.3
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3.3
μF
Doc ID 15764 Rev 5
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 17. Gate charge test circuit
Figure 19. Unclamped inductive load test
Figure 21. Switching time waveform
V
P
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V
W
0
0
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P
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2200
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2.7kΩ
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47kΩ
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GS
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D.U.T.
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100Ω
DS
2200
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100nF
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td
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t
off
Test circuits
3.3
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D.U.T.
t
f
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AM01469v1
AM01471v1
AM01473v1
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90%
V
V
V
9/17
G
DD
DD