STD10NM60N STMicroelectronics, STD10NM60N Datasheet - Page 3

• Manufacturer Part Number: STD10NM60N
• Description: MOSFET N-CH 600V 8A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD10NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.53ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 550 mOhms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10021-2

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
Table 4.
Symbol
Symbol
R
Symbol
R
R
dv/dt
I
DM
P
thj-case
V
thj-amb
V
T
thj-pcb
E
SD
I
T
T
I
I
TOT
ISO
AS
GS
stg
D
D
AS
J
J
(2)
≤ 10 A, di/dt ≤ 400 A/µs, V
(3)
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)
Single pulse avalanche energy (starting
T
J
Absolute maximum ratings
Thermal data
Avalanche characteristics
=25 °C, I
C
=25 °C)
D
=I
AS
Parameter
Parameter
Parameter
, V
DS
DD
peak ≤ V
C
Doc ID 15764 Rev 5
=50 V)
= 25 °C
(BR)DSS
C
C
= 25 °C
= 100 °C
, V
DD
= 80% V
TO-220 TO-220FP IPAK DPAK
TO-220 TO-220FP IPAK DPAK
(BR)DSS
1.79
10
32
70
5
62.50
.
300
10
32
2500
- 55 to 150
5
25
5
(1)
Value
Value
Value
(1)
(1)
± 25
200
15
4
100
Electrical ratings
1.79
10
32
70
5
50
°C/W
°C/W
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
W
A
A
A
A
V
V
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