STD10NM60N STMicroelectronics, STD10NM60N Datasheet - Page 3
![MOSFET N-CH 600V 8A DPAK](/photos/5/59/55922/std10nm60n_sml.jpg)
STD10NM60N
Manufacturer Part Number
STD10NM60N
Description
MOSFET N-CH 600V 8A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP10NM60N.pdf
(17 pages)
Specifications of STD10NM60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.53ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Configuration
Single
Resistance Drain-source Rds (on)
550 mOhms
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
10 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10021-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD10NM60N
Manufacturer:
ST
Quantity:
30 000
Part Number:
STD10NM60N
Manufacturer:
ST
Quantity:
20 000
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
Table 4.
Symbol
Symbol
R
Symbol
R
R
dv/dt
I
DM
P
thj-case
V
thj-amb
V
T
thj-pcb
E
SD
I
T
T
I
I
TOT
ISO
AS
GS
stg
D
D
AS
J
J
(2)
≤ 10 A, di/dt ≤ 400 A/µs, V
(3)
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)
Single pulse avalanche energy (starting
T
J
Absolute maximum ratings
Thermal data
Avalanche characteristics
=25 °C, I
C
=25 °C)
D
=I
AS
Parameter
Parameter
Parameter
, V
DS
DD
peak ≤ V
C
Doc ID 15764 Rev 5
=50 V)
= 25 °C
(BR)DSS
C
C
= 25 °C
= 100 °C
, V
DD
= 80% V
TO-220 TO-220FP IPAK DPAK
TO-220 TO-220FP IPAK DPAK
(BR)DSS
1.79
10
32
70
5
62.50
.
300
10
32
2500
- 55 to 150
5
25
5
(1)
Value
Value
Value
(1)
(1)
± 25
200
15
4
100
Electrical ratings
1.79
10
32
70
5
50
°C/W
°C/W
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
W
A
A
A
A
V
V
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