STD10NM60N STMicroelectronics, STD10NM60N Datasheet - Page 12
![MOSFET N-CH 600V 8A DPAK](/photos/5/59/55922/std10nm60n_sml.jpg)
STD10NM60N
Manufacturer Part Number
STD10NM60N
Description
MOSFET N-CH 600V 8A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP10NM60N.pdf
(17 pages)
Specifications of STD10NM60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.53ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Configuration
Single
Resistance Drain-source Rds (on)
550 mOhms
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
10 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10021-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD10NM60N
Manufacturer:
ST
Quantity:
30 000
Part Number:
STD10NM60N
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
12/17
DIM.
A
A
D
E
V2
b
c
e
L
L
L
A
D
E
H
R
b
c
e
L
4
2
1
1
2
4
1
2
1
1
m
2
0
0
0
5
0
0
6
6
4
9
0
0
2 .
9 .
0 .
6 .
2 .
4 .
4 .
0 .
4 .
4 .
3 .
6 .
1
i
. n
o
0
0
3
4
0
5
8
0
0
0
5
0
TO-252 (DPAK) mechanical data
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Doc ID 15764 Rev 5
mm.
5
4
2
2
0
0
y t
1 .
7 .
2 .
8 .
8 .
2 .
p
0
0
8
0
0
0
0068772_G
1
m
2
1
0
0
5
0
0
6
6
4
0
8
1 .
2 .
4 .
6 .
6 .
2 .
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4 .
9 .
6 .
a
1
1 .
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. x
0
0
3
0
0
0
0
0
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