STD10NM60N STMicroelectronics, STD10NM60N Datasheet - Page 13
![MOSFET N-CH 600V 8A DPAK](/photos/5/59/55922/std10nm60n_sml.jpg)
STD10NM60N
Manufacturer Part Number
STD10NM60N
Description
MOSFET N-CH 600V 8A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP10NM60N.pdf
(17 pages)
Specifications of STD10NM60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.53ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Configuration
Single
Resistance Drain-source Rds (on)
550 mOhms
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
10 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10021-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD10NM60N
Manufacturer:
ST
Quantity:
30 000
Part Number:
STD10NM60N
Manufacturer:
ST
Quantity:
20 000
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Dim
L20
L30
∅P
D1
H1
b1
e1
J1
L1
Q
A
D
E
F
b
c
e
L
TO-220 type A mechanical data
Doc ID 15764 Rev 5
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
16.40
28.90
1.27
mm
Typ
Package mechanical data
0015988_Rev_S
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
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