IRF6616 International Rectifier, IRF6616 Datasheet - Page 8

• Manufacturer Part Number: IRF6616
• Description: MOSFET N-CH 30V 19A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6616

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3765pF @ 20V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 4.4 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

8
™
™
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
1.38
MIN
6.25
3.85
0.35
0.68
0.68
0.80
0.38
0.88
2.28
0.59
0.03
0.08
4.80
METRIC
DIMENSIONS
1.42
1.01
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.84
0.42
2.41
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.023
0.001
0.003
MIN
IMPERIAL
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.028
0.003
0.007
MAX
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