IRF6616 International Rectifier, IRF6616 Datasheet - Page 5

• Manufacturer Part Number: IRF6616
• Description: MOSFET N-CH 30V 19A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6616

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3765pF @ 20V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 4.4 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1000.00
Fig 10. Typical Source-Drain Diode Forward Voltage
100.00
Fig 12. Maximum Drain Current vs. Case Temperature
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10.00
1.00
0.10
120
100
80
60
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
25
T J = 150°C
T J = 25°C
T J = -40°C
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
75
100
Fig 14. Maximum Avalanche Energy Vs. Drain Current
V GS = 0V
125
200
160
120
80
40
0
25
150
Starting T J , Junction Temperature (°C)
50
75
100
Fig 13. Typical Threshold Voltage vs. Junction
1000
TOP
BOTTOM
2.5
2.0
1.5
1.0
100
0.1
10
1
-75
Fig11. Maximum Safe Operating Area
0
125
4.3A
T A = 25°C
Tj = 150°C
Single Pulse
3.7A
-50
I D
15A
T J , Junction Temperature ( °C )
V DS , Drain-to-Source Voltage (V)
-25
150
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Temperature
0
25
10
I D = 250µA
50
75
10msec
100µsec
1msec
100
100 125 150
1000
5