IRF6616 International Rectifier, IRF6616 Datasheet

MOSFET N-CH 30V 19A DIRECTFET

IRF6616

Manufacturer Part Number
IRF6616
Description
MOSFET N-CH 30V 19A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6616.pdf (10 pages)

Specifications of IRF6616

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 4.5V
Input Capacitance (ciss) @ Vds
3765pF @ 20V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
19 A
Power Dissipation
2.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
4.4 ns
Minimum Operating Temperature
- 40 C
Rise Time
19 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF6616TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF6616TRPBF
Quantity:
86
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚
ƒ
l
l
l
l
l
l
l
Description
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be
used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.
Notes:
www.irf.com
Absolute Maximum Ratings
V
V
I
I
I
I
E
I
D
D
D
DM
AR
DS
GS
AS
RoHS compliant containing no lead or bormide 
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
@ T
@ T
@ T
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
SQ
8.0
6.0
4.0
2.0
12
10
A
A
C
0
= 25°C
= 70°C
= 25°C
2.0
Fig 1. Typical On-Resistance vs. Gate Voltage
SX
V GS , Gate-to-Source Voltage (V)
4.0
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
6.0
T J = 125°C
T J = 25°C
Ãg
8.0
g
Parameter
I D = 19A
GS
GS
GS
MQ
@ 10V
@ 10V
@ 10V
h
10.0
f
MX
„
…
†
40V max ±20V max 3.7mΩ@ 10V 4.6mΩ@ 4.5V
Q
29nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
measured with thermocouple mounted to top (Drain) of part.
DSS
6
5
4
3
2
1
0
MT

0
J
9.4nC
= 25°C, L = 0.32mH, R
I D = 15A
Q
gd
V
DirectFET™ Power MOSFET ‚
GS
MP
MX
Q G Total Gate Charge (nC)
10
V DS = 32V
VDS= 20V
2.4nC
Q
gs2
Max.
106
150
±20
40
19
15
36
15
R
G
20
DS(on)
33nC
= 25Ω, I
Q
TM
rr
IRF6616
packaging to achieve low
DirectFET™ ISOMETRIC
AS
15nC
Q
=15A.
30
oss
R
DS(on)
Units
V
mJ
1.8V
V
A
A
gs(th)
11/16/05
40
1

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IRF6616 Summary of contents

Page 1

... The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom. ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings Power Dissipation 25° 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 150° 25° -40°C 10 ...

Page 5

150° 25° -40°C 10.00 1.00 0.10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode ...

Page 6

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Reverse Recovery „ Current - + D.U. Re-Applied G + Voltage ...

Page 8

DIMENSIONS IMPERIAL METRIC MAX MIN CODE MIN MAX 6.35 A 0.246 6.25 0.250 5.05 0.189 B 4.80 0.201 3.95 C 3.85 0.152 0.156 D 0.45 0.014 0.35 0.018 0.72 0.027 E 0.68 0.028 0.72 F 0.027 0.028 ...

Page 9

... NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6616). For 1000 parts on 7" reel, order IRF6616TR1) CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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