IRF6616 International Rectifier, IRF6616 Datasheet - Page 6

• Manufacturer Part Number: IRF6616
• Description: MOSFET N-CH 30V 19A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6616

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3765pF @ 20V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 4.4 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 16a. Unclamped Inductive Test Circuit
Fig 15a. Gate Charge Test Circuit
6
12V
V
GS
R G
20V
GS
Same Type as D.U.T.
V DS
Fig 17a. Switching Time Test Circuit
Current Regulator
Duty Factor < 0.1%
Pulse Width < 1µs
.2µF
V
t p
GS
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
V
.3µF
DS
0.01 Ω
L
I
G
D.U.T.
D.U.T
I
D
15V
L
D
V
DRIVER
+
-
DD
V
DS
+
-
+
-
V DD
A
90%
V
10%
V
DS
Fig 15b. Gate Charge Waveform
GS
Fig 16b. Unclamped Inductive Waveforms
I
AS
Fig 17b. Switching Time Waveforms
Vgs(th)
Qgs1 Qgs2
Vds
t
d(on)
t
r
Qgd
t p
Qgodr
t
d(off)
V
(BR)DSS
t
f
www.irf.com
Vgs
Id