IRF6616 International Rectifier, IRF6616 Datasheet - Page 7

• Manufacturer Part Number: IRF6616
• Description: MOSFET N-CH 30V 19A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6616

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3765pF @ 20V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 4.4 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Fig 18.
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Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
S
S
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
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P.W.
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S = SOURCE
Waveform
Waveform
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Body Diode
Period
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Body Diode Forward
D
D
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
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V
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DD
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