BUK7107-55AIE,118 NXP Semiconductors, BUK7107-55AIE,118 Datasheet - Page 9

• Manufacturer Part Number: BUK7107-55AIE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55AIE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057272118; BUK7107-55AIE /T3; BUK7107-55AIE /T3

Philips Semiconductors
9397 750 09877
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Drain-sense current ratio as a function of
I D /I sense
V
I
D
600
550
500
450
400
120
100
DS
(A)
I D
= 25 A
80
60
40
20
0
function of gate-source voltage; typical values.
gate-source voltage; typical values.
= 25 V
4
0
8
2
12
175 C
4
16
T j = 25 C
V GS (V)
V GS (V)
03nj27
03ni70
20
Rev. 01 — 12 August 2002
6
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Reverse diode current as a function of reverse
V GS
(V)
T
V
100
j
(A)
GS
I S
80
60
40
20
10
= 25 C; I
0
8
6
4
2
0
gate charge; typical values.
diode voltage; typical values.
0.0
= 0 V
0
D
BUK71/7907-55AIE
0.2
= 25 A
V DS = 14 V
40
TrenchPLUS standard level FET
0.4
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
175 C
0.6
80
V DS = 44 V
Q G (nC)
0.8
T j = 25 C
V SD (V)
03nf25
03ni72
120
1.0
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