BUK7107-55AIE,118 NXP Semiconductors, BUK7107-55AIE,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7107-55AIE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55AIE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057272118; BUK7107-55AIE /T3; BUK7107-55AIE /T3

Philips Semiconductors
9397 750 09877
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
(%)
P
(A)
I D
T
120
10 3
10 2
der
mb
10
80
40
1
0
function of mounting base temperature.
= 25 C; I
1
0
=
---------------------- -
P
Capped at 75 A due to package
Limit R DSon = V DS /I D
tot 25 C
P
tot
DM
50
single pulse.
100%
100
150
T mb
03na19
C)
200
Rev. 01 — 12 August 2002
DC
10
Fig 2. Continuous drain current as a function of
V
GS
160
120
I D
(A)
80
40
mounting base temperature.
0
10 V
0
Capped at 75A due to package
BUK71/7907-55AIE
50
TrenchPLUS standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V DS (V)
100
100 s
1 ms
t p = 10 s
10 ms
100 ms
150
T mb ( C)
03nf55
03ni63
10 2
200
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