BUK7107-55AIE,118 NXP Semiconductors, BUK7107-55AIE,118 Datasheet - Page 12
![MOSFET N-CH 55V 75A D2PAK](/photos/5/58/55896/d2pak_to-263_sml.jpg)
BUK7107-55AIE,118
Manufacturer Part Number
BUK7107-55AIE,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7907-55AIE127.pdf
(15 pages)
Specifications of BUK7107-55AIE,118
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Current Sensing
Rds On (max) @ Id, Vgs
7 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
272W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (4 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
272 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057272118
BUK7107-55AIE /T3
BUK7107-55AIE /T3
BUK7107-55AIE /T3
BUK7107-55AIE /T3
Philips Semiconductors
7. Soldering
9397 750 09877
Product data
Fig 19. Reflow soldering footprint for SOT426.
Dimensions in mm.
handbook, full pagewidth
8.15
7.95
4.85
8.35
solder lands
solder resist
occupied area
solder paste
2.25
4.60
3.00
2.15
1.50
0.30
1.50
Rev. 01 — 12 August 2002
1.70
(2 )
10.85
10.60
10.50
7.50
7.40
8.15
3.40
1.70
BUK71/7907-55AIE
0.90
1.00
MSD058
0.20
TrenchPLUS standard level FET
5.40
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.275
8.075
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