BUK7107-55AIE,118 NXP Semiconductors, BUK7107-55AIE,118 Datasheet - Page 2
![MOSFET N-CH 55V 75A D2PAK](/photos/5/58/55896/d2pak_to-263_sml.jpg)
BUK7107-55AIE,118
Manufacturer Part Number
BUK7107-55AIE,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7907-55AIE127.pdf
(15 pages)
Specifications of BUK7107-55AIE,118
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Current Sensing
Rds On (max) @ Id, Vgs
7 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
272W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (4 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
272 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057272118
BUK7107-55AIE /T3
BUK7107-55AIE /T3
BUK7107-55AIE /T3
BUK7107-55AIE /T3
Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
9397 750 09877
Product data
Symbol
V
V
V
I
I
P
I
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
Electrostatic Discharge
V
D
DM
GS(CL)
DR
DRM
esd
DS
DGS
GS
tot
stg
j
DS(AL)S
Current is limited by power dissipation chip rating
Continuous current is limited by package.
Limiting values
Parameter
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
gate-source clamping current
storage temperature
junction temperature
reverse drain current
peak reverse drain current
non-repetitive drain-source avalanche
energy
electrostatic discharge voltage; all pins Human Body Model; C = 100 pF;
Rev. 01 — 12 August 2002
Conditions
T
Figure 2
T
T
Figure 3
T
continuous
t
T
T
unclamped inductive load; I
V
starting T
R = 1.5 k
I
p
DG
mb
mb
mb
mb
mb
mb
DS
= 5 ms;
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 250 A
55 V; V
and
j
= 25 C
= 0.01
3
Figure 1
GS
GS
GS
= 10 V; R
= 10 V;
= 10 V;
p
p
BUK71/7907-55AIE
10 s;
10 s
GS
Figure 2
D
= 68 A;
= 50 ;
TrenchPLUS standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
[1]
[2]
[2]
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
55
55
140
75
75
560
272
10
50
+175
+175
140
75
560
460
6
20
Unit
V
V
V
A
A
A
A
W
mA
mA
A
A
A
mJ
kV
C
C
2 of 15