PSMN030-150P,127 NXP Semiconductors, PSMN030-150P,127 Datasheet - Page 6
![MOSFET N-CH 150V 55.5A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
PSMN030-150P,127
Manufacturer Part Number
PSMN030-150P,127
Description
MOSFET N-CH 150V 55.5A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN030-150P127.pdf
(13 pages)
Specifications of PSMN030-150P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
98nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
55.5A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
55.5 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056420127::PSMN030-150P::PSMN030-150P
NXP Semiconductors
6. Characteristics
Table 6.
PSMN030-150P
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 December 2010
Conditions
I
I
I
I
I
V
V
V
V
V
V
I
V
V
T
V
R
measured from tab to centre of die ;
T
measured from drain lead to centre of
die (SOT78 package only) ;
T
measured from source lead to source
bond pad ; T
I
I
V
D
D
D
D
D
D
S
S
j
j
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
GS
G(ext)
= 25 °C
= 25 °C
= 25 °C
= 25 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 55.5 A; V
= 150 V; V
= 150 V; V
= 25 V; V
= 75 V; R
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 10 V; T
= 0 V; V
= 5.6 Ω; T
N-channel TrenchMOS SiliconMAX standard level FET
GS
S
DS
DS
DS
DS
j
D
D
/dt = -100 A/µs;
= 25 °C
DS
j
GS
DS
L
DS
= 25 °C
= 25 A; T
= 25 A; T
= 0 V; T
GS
GS
= V
= V
= V
= 1.5 Ω; V
GS
GS
= 30 V; T
= 120 V;
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
= 25 °C
j
j
j
j
j
j
j
= -55 °C
= 25 °C
= 175 °C
= 175 °C
= 25 °C
j
GS
= 25 °C
= 25 °C
j
j
= 25 °C
j
j
= 25 °C
= 175 °C
= -55 °C
= 25 °C
= 10 V;
PSMN030-150P
Min
133
150
-
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
0.05
-
2
2
-
24
98
16
38
3680
470
220
18
71
97
76
3.5
4.5
7.5
0.85
109
610
© NXP B.V. 2010. All rights reserved.
-
Max
-
-
6
4
-
10
500
100
100
81
30
-
-
50
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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