PSMN030-150B,118 NXP Semiconductors, PSMN030-150B,118 Datasheet
PSMN030-150B,118
Specifications of PSMN030-150B,118
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PSMN030-150B,118 Summary of contents
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... PSMN030-150B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 13 December 2010 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... ° ° j(init) ≤ unclamped sup t = 100 µs p ≤ sup Ω; unclamped R GS All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B Graphic symbol mbb076 3 Version SOT404 Min Max - 150 = 20 kΩ - 150 222 - ...
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... Fig 2. 003aaf140 ( μs 100 μ 100 (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B 100 150 Normalized continuous drain current as a function of mounting base temperature 2 10 prior to avalanche = 150 ° −3 −2 − ...
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... P 0.02 −2 10 single pulse −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B Min Typ - - - 50 003aaf141 t p δ −2 − (s) p Max Unit 0.6 K/W ...
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... G(ext) j measured from tab to centre of die ; °C j measured from source lead to source bond pad ; ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B Min Typ Max = -55 °C 133 - - = 25 °C 150 - - 0. 500 - 2 100 - ...
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... (V) GS Fig 9. 003aaf146 V 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B 0.07 4.4 4.6 4.8 5 DS(on) (Ω) 5.2 0.05 0.03 0. °C j Drain-source on-state resistance as a function of drain current ...
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... V (V) GS Fig 13. Input, output and reverse transfer capacitances 003aaf152 V = 120 V DD 120 160 Q (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B (pF − MHz function of drain-source voltage; typical ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN030-150B v.2 20101213 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 December 2010 Document identifier: PSMN030-150B ...