PSMN030-150P,127 NXP Semiconductors, PSMN030-150P,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN030-150P,127
• Description: MOSFET N-CH 150V 55.5A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN030-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 55.5A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55.5 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056420127::PSMN030-150P::PSMN030-150P

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN030-150P
Product data sheet
Symbol
R
R
Fig 5.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
All information provided in this document is subject to legal disclaimers.
δ = 0.5
0.2
0.1
0.05
0.02
single pulse
10
Rev. 02 — 16 December 2010
−5
10
−4
N-channel TrenchMOS SiliconMAX standard level FET
10
−3
P
Conditions
in free air
10
−2
t
p
T
10
003aaf053
−1
δ =
t
p
(s)
T
t
t
p
1
PSMN030-150P
Min
-
-
Typ
-
60
© NXP B.V. 2010. All rights reserved.
-
Max
0.6
Unit
K/W
K/W
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