PSMN030-150P,127 NXP Semiconductors, PSMN030-150P,127 Datasheet
![MOSFET N-CH 150V 55.5A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
PSMN030-150P,127
Specifications of PSMN030-150P,127
Related parts for PSMN030-150P,127
PSMN030-150P,127 Summary of contents
Page 1
... PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 16 December 2010 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
Page 2
... N-channel TrenchMOS SiliconMAX standard level FET Simplified outline 1 2 SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Graphic symbol mb G mbb076 3 © NXP B.V. 2010. All rights reserved ...
Page 3
... R GS 003aaf050 100 I D (%) 150 200 0 T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Min - = 20 kΩ - -55 - ° 100 µ °C; - ...
Page 4
... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P 2 10 prior to avalanche = 150 ° −3 −2 − unclamped inductive load Single-shot avalanche rating; avalanche current as a function of avalanche period 003aaf064 25 ° ...
Page 5
... Z th(j-mb) (K/W) 0.2 −1 10 0.1 0.05 0.02 P −2 10 single pulse −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Min Typ - - - 60 003aaf053 t p δ −2 − (s) p Max Unit 0.6 K/W ...
Page 6
... °C j measured from source lead to source bond pad ; ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Min Typ Max = -55 °C 133 - - °C 150 - - ° 175 °C - ...
Page 7
... Fig 7. 003aaf056 = 25 ° (V) GS Fig 9. 003aaf058 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P 0. DS(on) (Ω) 4.4 V 4.6 V 4.8 V 0.06 5.2 V 0.04 0. °C j Drain-source on-state resistance as a function of drain current ...
Page 8
... GS Fig 13. Input, output and reverse transfer capacitances 003aaf062 V = 120 V DD 100 120 140 Q (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P (pF − MHz function of drain-source voltage; typical ...
Page 9
... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...
Page 10
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN030-150P v.2 20101216 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
Page 11
... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P © NXP B.V. 2010. All rights reserved ...
Page 12
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Trademarks © NXP B.V. 2010. All rights reserved ...
Page 13
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 December 2010 Document identifier: PSMN030-150P ...