PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN035-150P,127
• Description: MOSFET N-CH 150V 50A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055716127::PSMN035-150P::PSMN035-150P

Philips Semiconductors
9397 750 07994
Product specification
Fig 14. Source (diode forward) current as a function of
T
j
= 25 C and 175 C; V
source-drain (diode forward) voltage; typical
values.
(A)
I S
50
45
40
35
30
25
20
15
10
5
0
0
0.2
0.4
T j = 175 o C
GS
= 0 V
0.6
0.8
T j = 25 o C
1.0
V SD (V)
003aaa027
PSMN035-150B; PSMN035-150P
Rev. 04 — 22 February 2001
1.2
N-channel enhancement mode field-effect transistor
Fig 15. Gate-source voltage as a function of gate
I
D
= 50 A; V
charge; typical values.
V GS
(V)
10
8
6
4
2
0
0
DD
I D = 50 A
T j = 25 o C
= 30 V and 120 V
20
V DD = 30 V
40
© Philips Electronics N.V. 2001. All rights reserved.
V DD = 120 V
60
Q G (nC)
003aaa028
80
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