PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN035-150P,127
• Description: MOSFET N-CH 150V 50A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055716127::PSMN035-150P::PSMN035-150P

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07994
Product specification
Symbol
R
R
th(j-mb)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
7.1 Transient thermal impedance
Fig 5. Transient thermal impedance from junction to mounting base as a function of
pulse duration.
Z th(j-mb)
(K/W)
10 -3
10 -1
10 -2
1
PSMN035-150B; PSMN035-150P
10 -6
Rev. 04 — 22 February 2001
0.05
= 0.5
0.02
0.1
0.2
10 -5
Conditions
Figure 5
SOT78 package; vertical in still air
SOT404 package; mounted on
printed circuit board; minimum
footprint.
Single Pulse
N-channel enhancement mode field-effect transistor
10 -4
10 -3
10 -2
P
© Philips Electronics N.V. 2001. All rights reserved.
t p
10 -1
T
Value
0.6
60
50
t p (s)
003aaa018
=
t p
T
t
1
Unit
K/W
K/W
K/W
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