PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet
PSMN035-150P,127
Specifications of PSMN035-150P,127
Related parts for PSMN035-150P,127
PSMN035-150P,127 Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 04 — 22 February 2001 1. Description SiliconMAX™ lowest possible on-state resistance for each package. Product availability: PSMN035-150P in SOT78 (TO-220AB) PSMN035-150B in SOT404 (D 2. Features Fast switching Very low on-state resistance. 3. Applications Switched mode power supplies. 4. Pinning information ...
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... T operating junction temperature j Source-drain diode I source (diode forward) current S (DC) I peak source (diode forward) SM current Avalanche ruggedness E non-repetitive avalanche energy AS I non-repetitive avalanche current AS 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Conditions 175 Conditions ...
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... single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 03aa16 I der 125 150 175 200 der Fig 2. Normalized continuous drain current as a function of mounting base temperature. ...
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... Transient thermal impedance Fig 5. Transient thermal impedance from junction to mounting base as a function of 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Conditions Figure 5 SOT78 package; vertical in still air SOT404 package; mounted on printed circuit board ...
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... Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Conditions Min I = 250 150 mA Figure 2 175 C 1 ...
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... V 5.2 V 0.10 0.08 0.06 0.04 0. Fig 8. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 003aaa019 (A) 5 4.8 V 4.6 V 4 and 175 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage ...
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... and 175 Fig 12. Forward transconductance as a function of drain current; typical values. 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 003aaa023 I D max (A) typ min 100 140 180 Fig 11. Sub-threshold drain current as a function of gate-source voltage. 003aaa025 ...
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... and 175 Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 003aaa027 0.8 1 Fig 15. Gate-source voltage as a function of gate charge; typical values. ...
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... DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm 4.1 1.27 0.7 1.0 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT78 Fig 16. SOT78 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor mounting scale ...
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... H D DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 2 Fig 17. SOT404 (D -PAK). 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 2 scale max. 1.60 10.30 2.90 15. ...
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... Lotus Manuscript version; August 1999 Rev 1.000 • Front and back page (including address information) added. 02 19990801 - Product specification; second version; supersedes initial version PSMN035-150_SERIES_1 of 1 February 1999 • Lotus Manuscript version; August 1999 Rev 1.000. 01 19990201 - Product specification; initial version • ...
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... Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor [1] 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury ...
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... Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. + 4160, Fax. + 7811 Norway: Tel. + 8000, Fax. + 8341 Philippines: Tel ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 February 2001 Document order number: 9397 750 07994 PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Printed in The Netherlands ...