PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN035-150P,127
• Description: MOSFET N-CH 150V 50A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055716127::PSMN035-150P::PSMN035-150P

Philips Semiconductors
9397 750 07994
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain
T
P
mb
der
function of mounting base temperature.
currents as a function of drain-source voltage.
= 25 C; I
P der
(%)
=
(A)
I D
10 2
10 3
10
----------------------
P
120
100
1
80
60
40
20
tot 25 C
0
P
1
P
0
tot
R DSon = V DS / I D
DM
t p
25
is single pulse.
T
100%
50
d =
10
t p
T
t
75
D.C.
100
125
10 2
150
100 ms
t p = 10 s
V DS (V)
100 s
10 ms
1 ms
T mb ( o C)
003aaa016
175
03aa16
PSMN035-150B; PSMN035-150P
Rev. 04 — 22 February 2001
200
10 3
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
Fig 4. Non-repetitive avalanche ruggedness current
V
Unclamped inductive load; V
V
GS
GS
I
der
function of mounting base temperature.
as a function of pulse duration.
= 5 V; starting T
I der
(%)
10 V
=
I AS
(A)
10 2
10
1
120
100
------------------ -
I
10 -3
80
60
40
20
D 25 C
0
I
0
D
T j prior to avalanche = 150 o C
25
10 -2
100%
j
50
= 25 C and 150 C.
75
10 -1
DD
100
© Philips Electronics N.V. 2001. All rights reserved.
15 V; R
125
25 o C
1
150
T mb ( o C)
GS
t p (ms)
003aaa017
175
= 50 ;
03aa24
10
200
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