BUK9609-55A,118 NXP Semiconductors, BUK9609-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9609-55A,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9609-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 4633pF @ 25V
• Power - Max: 211W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057019118; BUK9609-55A /T3; BUK9609-55A /T3

Philips Semiconductors
9397 750 09229
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
(A)
I D
V
V
120
DS
GS
80
40
0
function of gate-source voltage; typical values.
= 25 V
= 0 V
0
1
175
°
C
2
(A)
T j = 25
I S
100
75
50
25
0
3
0.0
°
V GS (V)
C
03nh62
Rev. 01 — 21 February 2002
4
0.3
175
°
C
0.6
Fig 14. Gate-source voltage as a function of turn-on
handbook, halfpage
V GS
(V)
T
j
= 25 C; I
0.9
T j = 25
gate charge; typical values.
5
4
3
2
1
0
0
V SD (V)
03nh59
°
C
D
= 25 A
1.2
BUK95/9609-55A
20
V DD = 14 V
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
40
Q G (nC)
44 V
03nh60
60
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