BUK9609-55A,118 NXP Semiconductors, BUK9609-55A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9609-55A,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9609-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 4633pF @ 25V
• Power - Max: 211W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057019118; BUK9609-55A /T3; BUK9609-55A /T3

Philips Semiconductors
Table 5:
T
9397 750 09229
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified.
R DSon
(m
(A)
I D
T
9
T
300
200
100
j
j
)
= 25 C; t
= 25 C
25
20
15
10
0
5
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
10
5
4.8
3.2 V
3.4 V
V GS = 3 V
p
= 300 s
2
100
4
…continued
3.6 V
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
6
4 V
200
label is V GS (V)
8
I D (A)
V DS (V)
Conditions
I
Figure 15
I
V
S
S
03nh64
03nh65
GS
10 V
= 25 A; V
= 25 A; dI
5 V
= 10 V; V
Rev. 01 — 21 February 2002
300
10
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 25 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
handbook, halfpage
R DSon
(m
9
T
a = R
a
j
)
= 25 C; I
11
1.5
0.5
9
7
5
of gate-source voltage; typical values.
factor as a function of junction temperature.
2
1
0
-
DSon
0
60
/R
D
DSon(25 C)
Min
-
-
-
= 25 A
0
BUK95/9609-55A
5
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
0.85
70
160
60
10
120
Max
1.2
-
-
V GS (V)
T j (
03nh63
°
03ne89
C)
180
15
Unit
V
ns
nC
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